Back Side Illuminated High Dynamic Range 4.0μm Voltage Domain Global Shutter Pixel with Multiple Gain Readout

2019 June23-27

Authors K. Mori, T. Otaka, T. Isozaki, N. Yasuda, T. Akutsu, K. Miyauchi, A. Tsai, Y. Sawai, S. Tanaka I. Takayanagi and J. Nakamura

2019 International Image Sensor Workshop (IISW)

Backside illuminated image sensors with a 4.0μm global shutter (GS) pixel have been fabricated in a 45nm/65nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for photon-to-voltage conversion are formed on the top substrate (the 1st layer). Each photo converted signal from the 1st layer pixel is stored in sample-and-hold (S/H) capacitors on the bottom substrate (the 2nd layer) via micro hybrid-bump (HB) interconnection to achieve a voltage domain GS function. The 2 sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) in the GS operation.