Paper

A High Optical Performance 2.8μm BSI LOFIC Pixel with 120ke- FWC and 160μV/e- Conversion Gain

2019 June23-27

Authors Ken Miyauchi*, Shunsuke Okura*, Kazuya Mori*, Isao Takayanagi*, Junichi Nakamura* and Shigetoshi Sugawa**

*Brillnics Japan Inc.
**Graduate School of Engineering, Tohoku University.

Proceeding of the 2019 International Image Sensor Workshop, pp. 246-249, 2019

In this paper, we report about a prototype CMOS image sensor with a 2.8μm back side illuminated (BSI) pixel that employs the lateral overflow integration capacitor (LOFIC) to further expand dynamic range of our reported sensors. Full well capacity of 120ke- and conversion gain of 160μV/e- have been achieved. For high optical performance with the BSI structure, an n-layer of the deep photodiode under LOFIC is formed. Owing to this structure, 70% peak quantum efficiency and 91% angular response at ±20° have been achieved without blooming.​