4.0μm Stacked Voltage Mode Global Shutter Pixels with A BSI LOFIC and A PDAF Capability
2021 International Image Sensor Workshop (IISW)
In this paper, two types of 4.0m backside illuminated stacked voltage mode global shutter pixels implemented in a prototype CMOS image sensor are reported. One is a pixel with a lateral overflow integration capacitor (LOFIC) to extend the sensor dynamic range. The other is a pixel having two photodiodes and dual conversion gain which enables the phase detection auto focus capability and single exposure high dynamic range (SEHDR).
Thanks to the LOFIC and the dual conversion gain technologies, 90dB and 77dB SEHDR have been achieved in the global shutter mode.