4.0μm Stacked Voltage Mode Global Shutter Pixels with A BSI LOFIC and A PDAF Capability

2021 September

Authors Ken Miyauchi†, Kazuya Mori†, Toshiyuki Isozaki†, Yusuke Sawai†, Ho-Ching Chien‡ and Junichi Nakamura† (†Brillnics Japan Inc. ‡Brillnics Inc.)

Proceeding of the 2021 International Image Sensor Workshop, pp.316-319

In this paper, two types of 4.0􀁐m backside illuminated stacked voltage mode global shutter pixels implemented in a prototype CMOS image sensor are reported. One is a pixel with a lateral overflow integration capacitor (LOFIC) to extend the sensor dynamic range. The other is a pixel having two photodiodes and dual conversion gain which enables the phase detection auto focus capability and single exposure high dynamic range (SEHDR).
Thanks to the LOFIC and the dual conversion gain technologies, 90dB and 77dB SEHDR have been achieved in the global shutter mode.