(in Japanese) Optical Performance of A 120 ke- Full Well Capacity and 160µV/e- Conversion Gain 2.8µm Back Side Illuminated Pixel with Lateral Overflow Integration Capacitor

2019 Sep. 20

Authors Ken Miyauchi, Kazuya Mori, Isao Takayanagi, Junichi Nakamura and Shigetoshi Sugawa*
*Tohoku University


In this paper, we report about a prototype CMOS image sensor with a 2.8µm back side illuminated (BSI) pixel that employs the lateral overflow integration capacitor (LOFIC) to further expand dynamic range of our reported sensors. Owing to this structure, 160µV/e- conversion gain, 120ke- full well capacity, 70% peak quantum efficiency and 91% angular response at ±20° have been achieved without blooming.