(in Japanese) Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel
2019 Sep. 20
A backside illuminated image sensors with a 4.0μm global shutter (GS) pixel has been fabricated in a 45nm/65nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for photon-to-voltage conversion are formed on the top substrate (the 1st layer). Each photo converted signal from the 1st layer pixel is stored in sample-and-hold (S/H) capacitors on the bottom substrate (the 2nd layer) via micro-bump interconnection to achieve a voltage domain GS function. The 2 sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR)  in the GS operation.