(in Japanese) Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel

2019 Sep. 20

Authors Toshiyuki Isozaki, Kazuya Mori, Ken Miyauchi, Naoto Yasuda, Yusuke Sawai, Alex Tsai, Isao Takayanagi and Junichi Nakamura


A backside illuminated image sensors with a 4.0μm global shutter (GS) pixel has been fabricated in a 45nm/65nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for photon-to-voltage conversion are formed on the top substrate (the 1st layer). Each photo converted signal from the 1st layer pixel is stored in sample-and-hold (S/H) capacitors on the bottom substrate (the 2nd layer) via micro-bump interconnection to achieve a voltage domain GS function. The 2 sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) [1] in the GS operation.